Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (2): 027303    DOI: 10.1088/1674-1056/25/2/027303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
Jun Luo(罗俊)1, Sheng-Lei Zhao(赵胜雷)1, Min-Han Mi(宓珉瀚)1, Wei-Wei Chen(陈伟伟)2, Bin Hou(侯斌)2, Jin-Cheng Zhang(张进成)1, Xiao-Hua Ma(马晓华)1,2, Yue Hao(郝跃)1
1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

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