Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (1): 017201    DOI: 10.1088/1674-1056/25/1/017201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Characterization of vertical Au/β -Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer
X Z Liu(刘兴钊)1, C Yue(岳超)1, C T Xia(夏长泰)2, W L Zhang(张万里)1
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
2. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

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