Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors

doi:10.1088/1674-1056/24/12/128101

Abstract We investigate the conductivity characteristics in the surface accumulation layer of a junctionless nanowire transistor fabricated by the femtosecond laser lithography on a heavily n-doped silicon-on-insulator wafer. The conductivity of the accumulation region is totally suppressed when the gate voltage is more positive than the flatband voltage. The extracted low field electron mobility in the accumulation layer is estimated to be 1.25 cm²·V^-1·s^-1. A time-dependent drain current measured at 6 K predicts the existence of a complex trap state at the Si-SiO₂ interface within the bandgap. The suppressed drain current and comparable low electron mobility of the accumulation layer can be well described by the large Coulomb scattering arising from the presence of a large density of interface charged traps. The effects of charge trapping and the scattering at interface states become the main reasons for mobility reduction for electrons in the accumulation region.

Keywords: junctionless nanowire transistors trap femtosecond laser lithography electron mobility

Received: 05 May 2015
Revised: 21 August 2015
Accepted manuscript online:

PACS:	81.07.Gf	(Nanowires)
	73.63.-b	(Electronic transport in nanoscale materials and structures)
	73.40.-c	(Electronic transport in interface structures)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126) and the National Basic Research Program of China (Grant No. 2010CB934104).

Corresponding Authors: Han Wei-Hua, Yang Fu-Hua
E-mail: weihua@semi.ac.cn;fhyang@semi.ac.cn

Cite this article:

Ma Liu-Hong (马刘红), Han Wei-Hua (韩伟华), Wang Hao (王昊), Yang Xiang (杨香), Yang Fu-Hua (杨富华) Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors 2015 Chin. Phys. B 24 128101

[1]	Colinge J P, Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Razavi P, O'Neill B Blake A, White M, Kelleher A M, McCarthy B and Murphy R 2010 Nat. Nanotechnol. 5 225
[2]	Lee C W, Nazarov A N, Ferain I, Akhavan N D, Yan R, Razavi P, Yu R, Doria R T and Colinge J P 2010 Appl. Phys. Lett. 96 102106
[3]	Ionescu A M 2010 Nat. Nanotechnol. 5 178
[4]	Colinge J P, Lee C W, Ferain I, Akhavan N D, Yan R, Razavi P, Yu R, Nazarov A N and Doria R T 2010 Appl. Phys. Lett. 96 073510
[5]	Colinge J P, Kranti A, Yan R, Lee C W, Ferain I, Yu R, Akhavan N D and Razavi P 2011 Solid-State Electron. 65-66 33
[6]	Arnold E and Alok D 2001 IEEE Trans. Electron Dev. 48 1870
[7]	Nakata Y, Okada T and Maeda M 2002 Appl. Phys. Lett. 81 4239
[8]	Zhang Y L, Chen Q D, Xia H and Sun H B 2010 Nanotoday 5 435
[9]	Borowiec A and Haugen H K 2003 Appl. Phys. Lett. 82 4462
[10]	Tanaka T, Sun H B and Kawata S 2002 Appl. Phys. Lett. 80 312
[11]	Kawata S, Sun H B, Tanaka T and Takada K 2001 Nature 412 697
[12]	Carvalho E J, Alves M A R, Braga E S and Cescato L 2006 Microelectron. J. 37 1265
[13]	Du Y, Cao H, Yan W, Han W, Liu Y, Dong X, Zhang Y, Jin F, Zhao Z and Yang F 2012 Appl. Phys. A 106 575
[14]	Ghibaudo G 1988 Electron. Lett. 24 543
[15]	Joo M K, Mouis M, Jeon D Y, Barraud S Park1 S J, Kim G T and Ghibaudo G 2014 Semicond. Sci. Technol. 29 045024
[16]	Trevisoli R D, Doria R T, de Souza M and Pavanello M A 2011 Semicond. Sci. Technol. 26 105009
[17]	Jeon D Y, Park S J, Mouis M, Joo M K, Barraud S, Kim G T and Ghibaudo G 2014 Appl. Phys. Lett. 104 263510
[18]	Salfi J, Paradiso N, Roddaro S, Heun S, Nair S V, Savelyev I G, Blumin M, Beltram F and Ruda H E 2011 ACS Nano 5 2191
[19]	Liu F, Wang K L, Li C and Zhou C 2006 IEEE Trans. Nanotechnol. 5 441
[20]	Poli S, Pala M G and Poiroux T 2009 IEEE Trans. Electron Dev. 56 1191
[21]	Jeon D Y, Park S, Mouis M, Berthomé M, Barraud S, Kim G T and Ghibaudo G 2013 Solid-State Electron. 90 86

[1]	Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Chin. Phys. B, 2023, 32(3): 037201.
[2]	Generation of a blue-detuned optical storage ring by a metasurface and its application in optical trapping of cold molecules Chen Ling(凌晨), Yaling Yin(尹亚玲), Yang Liu(刘泱), Lin Li(李林), and Yong Xia(夏勇). Chin. Phys. B, 2023, 32(2): 023301.
[3]	High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波). Chin. Phys. B, 2023, 32(1): 017305.
[4]	High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). Chin. Phys. B, 2023, 32(1): 018503.
[5]	Charge self-trapping in two strand biomolecules: Adiabatic polaron approach D Chevizovich, S Zdravković, A V Chizhov, and Z Ivić. Chin. Phys. B, 2023, 32(1): 010506.
[6]	New designed helical resonator to improve measurement accuracy of magic radio frequency Tian Guo(郭天), Peiliang Liu(刘培亮), and Chaohong Lee(李朝红). Chin. Phys. B, 2022, 31(9): 093201.
[7]	Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[8]	Achieving ultracold Bose-Fermi mixture of ⁸⁷Rb and ⁴⁰K with dual dark magnetic-optical-trap Jie Miao(苗杰), Guoqi Bian(边国旗), Biao Shan(单标), Liangchao Chen(陈良超), Zengming Meng(孟增明), Pengjun Wang(王鹏军), Lianghui Huang(黄良辉), and Jing Zhang(张靖). Chin. Phys. B, 2022, 31(8): 080306.
[9]	Enhanced cold mercury atom production with two-dimensional magneto-optical trap Ye Zhang(张晔), Qi-Xin Liu(刘琪鑫), Jian-Fang Sun(孙剑芳), Zhen Xu(徐震), and Yu-Zhu Wang(王育竹). Chin. Phys. B, 2022, 31(7): 073701.
[10]	Loss prediction of three-level amplified spontaneous emission sources in radiation environment Shen Tan(谭深), Yan Li(李彦), Hao-Shi Zhang(张浩石), Xiao-Wei Wang(王晓伟), and Jing Jin(金靖). Chin. Phys. B, 2022, 31(6): 064211.
[11]	Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(5): 058505.
[12]	High-performance coherent population trapping clock based on laser-cooled atoms Xiaochi Liu(刘小赤), Ning Ru(茹宁), Junyi Duan(段俊毅), Peter Yun(云恩学), Minghao Yao(姚明昊), and Jifeng Qu(屈继峰). Chin. Phys. B, 2022, 31(4): 043201.
[13]	Tetrapartite entanglement measures of generalized GHZ state in the noninertial frames Qian Dong(董茜), R. Santana Carrillo, Guo-Hua Sun(孙国华), and Shi-Hai Dong(董世海). Chin. Phys. B, 2022, 31(3): 030303.
[14]	Interface modulated electron mobility enhancement in core-shell nanowires Yan He(贺言), Hua-Kai Xu(许华慨), and Gang Ouyang(欧阳钢). Chin. Phys. B, 2022, 31(11): 110502.
[15]	Removal of GaN film over AlGaN with inductively coupled BCl₃/Ar atomic layer etch Jia-Le Tang(唐家乐) and Chao Liu(刘超). Chin. Phys. B, 2022, 31(1): 018101.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors

Cite this article:

Online attention