Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

doi:10.1088/1674-1056/24/12/127801

Abstract InGaN/GaN multiple quantum well (MQW) green light-emitting diodes (LEDs) with varying InGaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus injection current reveals that several physical mechanisms may jointly influence the efficiency droop, resulting in a non-monotonic variation of droop behavior with increasing quantum well (QW) thickness. When the QW is very thin, the increase of InGaN well layer thickness makes the efficiency droop more serious due to the enhancement of polarization effect. When the QW thickness increases further, however, the droop is alleviated significantly, which is mainly ascribed to the enhanced non-radiative recombination process and the weak delocalization effect.

Keywords: InGaN/GaN multiple quantum wells light-emitting diode efficiency droop well thickness

Received: 16 June 2015
Revised: 11 August 2015
Accepted manuscript online:

PACS:	78.66.Fd	(III-V semiconductors)
	78.67.De	(Quantum wells)
	85.60.Jb	(Light-emitting devices)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One-Hundred Person Project of the Chinese Academy of Sciences, the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362), the Scientific Research Fund of Chongqing Municipal Education Commission, China (Grant No. KJ131206), and the Natural Science Foundation of Chongqing Municipal Science and Technology Commission, China (Grant No. cstc2012jjA50036).

Corresponding Authors: Zhao De-Gang
E-mail: dgzhao@red.semi.ac.cn

Cite this article:

Liu Wei (刘炜), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Li Xiang (李翔), Liang Feng (梁锋), Liu Jian-Ping (刘建平), Yang Hui (杨辉) Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode 2015 Chin. Phys. B 24 127801

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Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

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