Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

doi:10.1088/1674-1056/24/12/127306

Abstract In this paper the trapping effects in Al₂O₃/In_0.17Al_0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al₂O₃/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states.

Keywords: InAlN trapping frequency-dependent conductance metal-oxide-semiconductor high-electron-mobility transistors

Received: 05 April 2015
Revised: 06 August 2015
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	85.30.Tv	(Field effect devices)
	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

Corresponding Authors: Zhang Peng
E-mail: pengzhang@xidian.edu.cn

Cite this article:

Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Xue Jun-Shuai (薛军帅), Zhu Jie-Jie (祝杰杰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) Investigation of trap states in Al₂O₃ InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors 2015 Chin. Phys. B 24 127306

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Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

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Investigation of trap states in Al₂O₃ InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors