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Chin. Phys. B, 2015, Vol. 24(12): 127305    DOI: 10.1088/1674-1056/24/12/127305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process

Qi Lu-Wei (祁路伟), Yang Hong (杨红), Ren Shang-Qing (任尚清), Xu Ye-Feng (徐烨峰), Luo Wei-Chun (罗维春), Xu Hao (徐昊), Wang Yan-Rong (王艳蓉), Tang Bo (唐波), Wang Wen-Wu (王文武), Yan Jiang (闫江), Zhu Hui-Long (朱慧珑), Zhao Chao (赵超), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春)
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract  The positive bias temperature instability (PBTI) degradations of high-k/metal gate (HK/MG) nMOSFETs with thin TiN capping layers (1.4 nm and 2.4 nm) are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI (90 ℃, 125 ℃, 160 ℃) are studied and activation energy (Ea) values (0.13 eV and 0.15 eV) are extracted. Although the equivalent oxide thickness (EOT) values of two TiN thickness values are almost similar (0.85 nm and 0.87 nm), the 2.4-nm TiN one (thicker TiN capping layer) shows better PBTI reliability (13.41% at 0.9 V, 90 ℃, 1000 s). This is due to the better interfacial layer/high-k (IL/HK) interface, and HK bulk states exhibited through extracting activation energy and trap energy distribution in the high-k layer.
Keywords:  positive bias temperature instability (PBTI)      HK/MG      Ea      trap energy distribution  
Received:  26 June 2015      Revised:  27 July 2015      Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).
Corresponding Authors:  Qi Lu-Wei     E-mail:  qiluwei@ime.ac.cn

Cite this article: 

Qi Lu-Wei (祁路伟), Yang Hong (杨红), Ren Shang-Qing (任尚清), Xu Ye-Feng (徐烨峰), Luo Wei-Chun (罗维春), Xu Hao (徐昊), Wang Yan-Rong (王艳蓉), Tang Bo (唐波), Wang Wen-Wu (王文武), Yan Jiang (闫江), Zhu Hui-Long (朱慧珑), Zhao Chao (赵超), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春) Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process 2015 Chin. Phys. B 24 127305

[1] Ribes G, Mitard J, Denais M, Bruyere S, Monsieur F, Parthasarathy C, Vincent E and Ghibaudo G 2005 IEEE Trans. Dev. Mater. Reliab. 5 5
[2] Robertson J 2004 Eur. Phys. J. Appl. Phys. 28 265
[3] Huard Vincent 2010 in 48th Annual Proceedings: International Reliability Physics Symposium, 2010, May 2-6, Anaheim, USA, p. 33
[4] Mitard J, Garros X, Nguyen L P, Leroux C, Ghibaudo G, Martin F and Reimbold G 2006 in 44th Annual Proceedings: International Reliability Physics Symposium, 2006, March 26-30, San Jose, USA, p. 174
[5] Kang C Y, Choi R, Song S C, Ju B S, Hussain M M, Lee B H, Yang J W, Zeitzoff P, Pham D, Xiong W and Tseng H H 2006 in International SOI Conference, October 2-5, New York, USA, p. 135
[6] Pae S, Agostinelli M, Brazier M, Chau R, Dewey G, Ghani T, Hattendorf M, Hicks J, Kavalieros J, Kuhn K, Kuhn, M, Maiz J, Metz M, Mistry K, Prasad C, Ramey S, Roskowski A, Sandford J, Thomas C, Thomas J, Wiegand C and Wiedemer J 2008 in 46th Annual Proceedings: International Reliability Physics Symposium, 2008, April 27-May 1, Phoenix, UK, p. 352
[7] Kwong D L 2004 in 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, July 5-8, Hsinchu, Taiwan, p. 17
[8] Ang D S, Wang S and Ling C H 2005 IEEE Electron Dev. Lett. 26 906
[9] Schroder D K and Babcock J A 2003 J. Appl. Phys. 94 1
[10] BersukerG, Sim J H, Park C S, Young C D, Nadkarni S V, Choi R and Lee B H 2007 IEEE Trans. Dev. Mater. Reliab. 7 138
[11] Mukhopadhyay S, Joshi K and Chaudhary V 2014 in 52th Annual Proceedings: International Reliability Physics Symposium, 2014, June 1-5, Waikoloa, USA, GD. 3.1-GD. 3.11
[12] Zheng X F, Zhang W D and Govoreanu B 2010 IEEE Trans. Electron Dev. 57 2484
[13] Zhang X F, Fan S, Kang D, Zhang J K, Cao Y R, Ma X H and Hao Y 2014 Chin. Phys. Lett. 31 127701
[14] Hatta S W M, Ji Z, Zhang J F, Duan M, Zhang W D, Soin N, Kaczer B, De Gendt S, Groeseneken G and Sharifah Wan Muhamad 2013 IEEE Trans. Electron Dev. 60 1745
[15] Ren S Q, Yang H, Wang W W, Tang B, Tang Z Y, Wang X L, Xu H, Luo W C, Zhao C, Yan J, Chen D P and Ye T C 2015 Chin. Phys. B 24 077304
[16] Mukhopadhyay S, Joshi K and Chaudhary V 2014 in 52th Annual Proceedings: International Reliability Physics Symposium, 2014, June 1-5, Waikoloa, USA, GD. 3.1-GD. 3.11
[17] Wu L, Yu H Y, Li X, Pey K L, Hsu K Y, Tao H J, Chiu Y S, Lin C T, Xu J H and Wan H J 2010 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA) pp. 90-91
[18] Chen C L and King Y C 2011 IEEE Trans. Electron Dev. 58 3736
[19] Groeseneken G, Crupi F, Shickova A, Thijs S, Linten D, Kaczer B and Jurczak M 2008 in 46th Annual Proceedings: International Reliability Physics Symposium, 2008, April 27-May 1, Phoenix, UK, p. 352
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