Strictly non-blocking 4× 4 silicon electro-optic switch matrix

doi:10.1088/1674-1056/24/12/124209

Abstract

The first path-independent insertion-loss (PILOSS) strictly non-blocking 4× 4 silicon electro-optic switch matrix is reported. The footprint of this switch matrix is only 4.6 mm × 1.0 mm. Using single-arm modulation, the crosstalk measured in this test is-13 dB～-27 dB. And a maximum crosstalk deterioration of 6dB caused by two-path interference is also found.

Keywords: Strictly non-blocking silicon electro-optic switch matrix

Received: 03 June 2015
Revised: 14 July 2015
Accepted manuscript online:

PACS:	42.82.Ds	(Interconnects, including holographic interconnects)
	42.82.Cr	(Fabrication techniques; lithography, pattern transfer)
	42.82.Bq	(Design and performance testing of integrated-optical systems)

Fund:

Project supported by the National Basic Research Program of China (Grant No. 2011CB301701), the National High Technology Research and Development Program of China (Grant Nos. 2013AA014402, 2012AA012202, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61275065 and 61107048).

Corresponding Authors: Yu Yu-De
E-mail: yudeyu@semi.ac.cn

Cite this article:

Zhou Pei-Ji (周培基), Xing Jie-Jiang (邢界江), Li Xian-Yao (李显尧), Li Zhi-Yong (李智勇), Yu Jin-Zhong (余金中), Yu Yu-De (俞育德) Strictly non-blocking 4× 4 silicon electro-optic switch matrix 2015 Chin. Phys. B 24 124209

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