Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

doi:10.1088/1674-1056/24/12/124207

Abstract Excitation power and temperature-dependent photoluminescence (PL) spectra of the ZnTe epilayer grown on (100) GaAs substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the GaAs substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor-acceptor pair (DAP) nor conduction band-acceptor (e-A) emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal.

Keywords: photoluminescence ZnTe bulk crystal ZnTe epilayer defect or impurity-related emissions

Received: 22 May 2015
Revised: 07 July 2015
Accepted manuscript online:

PACS:	42.70.-a	(Optical materials)
	61.50.-f	(Structure of bulk crystals)
	68.55.-a	(Thin film structure and morphology)
	61.72.-y	(Defects and impurities in crystals; microstructure)

Fund: Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120131110006), the Key Science and Technology Program of Shandong Province, China (Grant No. 2013GGX10221), the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education), China (Grant No. JG1401), the National Natural Science Foundation of China (Grant No. 61306113), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), and the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan.

Corresponding Authors: Ji Zi-Wu, Guo Qi-Xin
E-mail: jiziwu@sdu.edu.cn;guoq@cc.saga-u.ac.jp

Cite this article:

Lü Hai-Yan (吕海燕), Mu Qi (牟奇), Zhang Lei (张磊), Lü Yuan-Jie (吕元杰), Ji Zi-Wu (冀子武), Feng Zhi-Hong (冯志红), Xu Xian-Gang (徐现刚), Guo Qi-Xin (郭其新) Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE 2015 Chin. Phys. B 24 124207

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Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

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