Chin. Phys. B
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Chin. Phys. B  2015, Vol. 24 Issue (11): 119401    DOI: 10.1088/1674-1056/24/11/119401
GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS Current Issue| Next Issue| Archive| Adv Search |
Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation
Yu Jun-Tinga, Chen Shu-Minga b, Chen Jian-Juna, Huang Peng-Chenga
a College of Computer, National University of Defense Technology, Changsha 410073, China;
b National Laboratory for Parallel and Distributed Processing, National University of Defense Technology, Changsha 410073, China

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