Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

doi:10.1088/1674-1056/24/11/118102

Abstract Semi-polar (1-101) InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting 111 planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared (1-101) GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.

Keywords: metalorganic chemical vapor deposition semipolar light emitting diodes

Received: 06 May 2015
Revised: 04 July 2015
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	78.60.Fi	(Electroluminescence)

Corresponding Authors: Chen Long
E-mail: long@simaera.com

Cite this article:

Chen Long (陈龙), Payne Justin (裴嘉鼎), Strate Jan (史达特), Li Cheng (李成), Zhang Jian-Ming (张建明), Yu Wen-Jie (俞文杰), Di Zeng-Feng (狄增峰), Wang Xi (王曦) Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates 2015 Chin. Phys. B 24 118102

[1]	Steckl A J, Park H J and Zavada J M;2007 Mater. Today 10 20
[2]	Pal S and Jacob C;2004 Bull. Mater. Sci. 27 501
[3]	Krost A and Dadgar A;2002 Phys. Status Solidi A 194 361
[4]	Liu B, Zhang S, Yin J Y, Zhang X W, Dun S B, Feng Z H and Cai S J;2013 Chin. Phys. B 22 057105
[5]	Krost A, Dadgar A, Strassburger G and Clos R;2003 Phys. Status Solidi A 200 26
[6]	Wen H J, Zhang J C, Lu X L, Wang Z Z, Ha W, Ge S S, Cao R T and Hao Y;2014 Chin. Phys. B 23 037302
[7]	Honda H, Kuroiwa Y, Yamaguchi M and Sawaki N;2002 Appl. Phys. Lett. 80 222
[8]	Takeuchi T, Takeuchi H, Sota S, Sakai H, Amano H and Akasaki I;1997 Jpn. J. Appl. Phys. 36 L177
[9]	Chen G T, Chang S P, Chyi J I and Chang M N;2008 Appl. Phys. Lett. 92 241904
[10]	Xu S R, Hao Y, Zhang J C, Xue X Y, Lin Z Y, Liu Z Y, Ma J C, Lü L, Li P X, He Q and Li J T;2011 Chin. Phys. B 20 107802
[11]	Hu Q, Wei T B, Duan R F, Yang J K, Huo Z Q, Lu T C and Zeng Y P;2009 Chin. Phys. Lett. 26 096801
[12]	Marx D, Kawazu Z, Nakayama T, Mihashi Y, Takami T, Nunoshita M and Ozeki T;1998 J. Cryst. Growth 189 87
[13]	Chen Z, Newman S, Brown D, Chung R, Keller S, Mishara U K, Denbaars S P and Nakamura S;2008 Appl. Phys. Lett. 93 191906
[14]	Honda Y, Kuroiwa Y, Yamaguchi M and Sawaki N;2002 Appl. Phys. Lett. 80 222
[15]	Zamir S, Meyler B and Salzman J;2001 Appl. Phys. Lett. 78 288
[16]	Honda Y, Kuroiwa Y, Yamaguchi M and Sawaki N;2002 J. Cryst. Growth 242 82
[17]	Sawaki N and Honda Y;2011 Sci. China Tech Sci. 54 38

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Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

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