Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET

doi:10.1088/1674-1056/24/10/106601

Abstract In this study we investigate the dynamic recovery effects in IRF9520 commercial p-channel power vertical double diffused metal-oxide semiconductor field-effect transistors (VDMOSFETs) subjected to negative bias temperature (NBT) stressing under the particular pulsed bias. Particular values of the pulsed stress voltage frequency and duty cycle are chosen in order to analyze the recoverable and permanent components of stress-induced threshold voltage shift in detail. The results are discussed in terms of the mechanisms responsible for buildup of oxide charge and interface traps. The partial recovery during the low level of pulsed gate voltage is ascribed to the removal of recoverable component of degradation, i.e., to passivation/neutralization of shallow oxide traps that are not transformed into the deeper traps (permanent component). Considering the value of characteristic time constant associated with complete removal of the recoverable component of degradation, it is shown that by selecting an appropriate combination of the frequency and duty cycle, the threshold voltage shifts induced under the pulsed negative bias temperature stress conditions can be significantly reduced, which may be utilized for improving the device lifetime in real application circuits.

Keywords: negative bias temperature instability vertical double-diffused metal-oxide semiconductor recoverable permanent degradation

Received: 01 March 2015
Revised: 28 April 2015
Accepted manuscript online:

PACS:	66.30.Dn	(Theory of diffusion and ionic conduction in solids)
	68.35.bg	(Semiconductors)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	82.33.Pt	(Solid state chemistry)

Fund: Project supported by the Fund from the Ministry of Education, Science and Technological Development of the Republic of Serbia (Grant Nos. OI-171026 and TR-32026) and the Ei PCB Factory, Niš.

Corresponding Authors: Danijel Danković
E-mail: danijel.dankovic@elfak.ni.ac.rs

Cite this article:

Danijel Danković, Ninoslav Stojadinović, Zoran Prijić, Ivica Manić, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET 2015 Chin. Phys. B 24 106601

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Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET

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