Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

doi:10.1088/1674-1056/24/10/108506

Abstract

A top-illuminated circular mesa uni-traveling-carrier photodetector (UTC-PD) is proposed in this paper. By employing Gaussian graded doping in InGaAs absorption layer and InP depleted layer, the responsivity and high speed response characteristics of the device are optimized simultaneously. The responsivity up to 1.071 A/W (the external quantum efficiency of 86%) is obtained at 1550 nm with a 40-μ diameter device under 10-V reverse bias condition. Meanwhile, the dark current of 7.874 nA and the 3-dB bandwidth of 11 GHz are obtained with the same device at a reverse bias voltage of 3 V.

Keywords: uni-traveling-carrier photodetector device growth and fabrication responsivity 3-dB bandwidth

Received: 28 April 2015
Revised: 27 May 2015
Accepted manuscript online:

PACS:	85.60.Gz	(Photodetectors (including infrared and CCD detectors))
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	61.05.cp	(X-ray diffraction)
	82.33.Ya	(Chemistry of MOCVD and other vapor deposition methods)

Fund:

Project supported partially by the National Natural Science Foundation of China (Grant Nos. 61274044 and 61077049), the National Basic Research Program of China (Grant No. 2010CB327600), the Program of Key International Science and Technology Cooperation Projects, China (Grant No. 2011RR000100), the 111 Project of China (Grant No. B07005), the Specialized Research Fund for the Doctoral Program of China (Grant No. 20130005130001), and the Natural Science Foundation of Beijing, China (Grant No. 4132069).

Corresponding Authors: Huang Yong-Qing
E-mail: yqhuang@bupt.edu.cn

Cite this article:

Chen Qing-Tao (陈庆涛), Huang Yong-Qing (黄永清), Fei Jia-Rui (费嘉瑞), Duan Xiao-Feng (段晓峰), Liu Kai (刘凯), Liu Feng (刘锋), Kang Chao (康超), Wang Jun-Chu (汪君楚), Fang Wen-Jing (房文敬), Ren Xiao-Min (任晓敏) Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity 2015 Chin. Phys. B 24 108506

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Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

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