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Chin. Phys. B, 2015, Vol. 24(10): 108502    DOI: 10.1088/1674-1056/24/10/108502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

An improved GGNMOS triggered SCR for high holding voltage ESD protection applications

Zhang Shuai (张帅)a, Dong Shu-Rong (董树荣)b, Wu Xiao-Jing (吴晓京)a, Zeng Jie (曾杰)b, Zhong Lei (钟雷)b, Wu Jian (吴健)b
a Department of Materials Science, Fudan University, Shanghai 200433, China;
b Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Abstract  Developing an electrostatic discharge (ESD) protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor (CMOS) technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor (GGNMOS) transistor triggered silicon-controlled rectifier (SCR) structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.
Keywords:  electrostatic discharge      holding voltage      GGSCR  
Received:  27 November 2014      Revised:  30 April 2015      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  85.30.Rs (Thyristors)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Corresponding Authors:  Zhang Shuai     E-mail:  szhang_fudan@hotmail.com

Cite this article: 

Zhang Shuai (张帅), Dong Shu-Rong (董树荣), Wu Xiao-Jing (吴晓京), Zeng Jie (曾杰), Zhong Lei (钟雷), Wu Jian (吴健) An improved GGNMOS triggered SCR for high holding voltage ESD protection applications 2015 Chin. Phys. B 24 108502

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