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Chin. Phys. B, 2015, Vol. 24(10): 107306    DOI: 10.1088/1674-1056/24/10/107306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Fermi level pinning effects at gate-dielectric interfaces influenced by interface state densities

Hong Wen-Ting (洪文婷), Han Wei-Hua (韩伟华), Lyu Qi-Feng (吕奇峰), Wang Hao (王昊), Yang Fu-Hua (杨富华)
Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor (MOS) technology.
Keywords:  interface state density      Fermi-level pinning      MIS structure      effective work function  
Received:  27 April 2015      Revised:  26 May 2015      Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.Tv (Field effect devices)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 11234007).
Corresponding Authors:  Han Wei-Hua     E-mail:  weihua@semi.ac.cn

Cite this article: 

Hong Wen-Ting (洪文婷), Han Wei-Hua (韩伟华), Lyu Qi-Feng (吕奇峰), Wang Hao (王昊), Yang Fu-Hua (杨富华) Fermi level pinning effects at gate-dielectric interfaces influenced by interface state densities 2015 Chin. Phys. B 24 107306

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