Nano LaAlO3 buffer layer-assisted tunneling current in manganite p-n heterojunction

doi:10.1088/1674-1056/24/10/107102

Abstract An oxide p-n heterojunction composed of a 150-nm La_0.67Ca_0.33MnO₃ (LCMO) film, 0.05 wt% Nb doped SrTiO₃ substrate (STON), and sandwiched 5-nm LaAlO₃ (LAO) thin film is fabricated with the pulsed laser deposition technique and the interfacial transport properties are experimentally studied. The rectifying behavior of the junction is in agreement with Newman's equation, indicating that tunneling is the dominant process for the carriers to pass through the interface while thermal emission is the dominant transport model of an LCMO/STON heterojunction with no LAO buffer layer.

Keywords: manganite heterojunction tunneling

Received: 23 April 2015
Revised: 18 May 2015
Accepted manuscript online:

PACS:	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.Gk	(Tunneling)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

Corresponding Authors: Wang Deng-Jing
E-mail: d.j.wang@163.com

Cite this article:

Ma Jun-Jie (马俊杰), Wang Deng-Jing (王登京), Huang Hai-Lin (黄海林), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝) Nano LaAlO₃ buffer layer-assisted tunneling current in manganite p-n heterojunction 2015 Chin. Phys. B 24 107102

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Nano LaAlO3 buffer layer-assisted tunneling current in manganite p-n heterojunction

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Nano LaAlO₃ buffer layer-assisted tunneling current in manganite p-n heterojunction