Chin. Phys. B
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Chin. Phys. B  2015, Vol. 24 Issue (9): 098103    DOI: 10.1088/1674-1056/24/9/098103
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Electronic mobility in the high-carrier-density limit ofion gel gated IDTBT thin film transistors
Bao Beia b, Shao Xian-Yic, Tan Lua b, Wang Wen-Hea b, Wu Yue-Shena b, Wen Li-Bina b, Zhao Jia-Qingc, Tang Weic, Zhang Wei-Mind, Guo Xiao-Junc, Wang Shuna b, Liu Yinga b e
a Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
b Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China;
c Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
d College of Chemistry and Chemical Engineering, Guangxi University for Nationalities, Nanning 530006, China;
e Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA

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