Chin. Phys. B
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Chin. Phys. B  2015, Vol. 24 Issue (9): 097303    DOI: 10.1088/1674-1056/24/9/097303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode
Zhong Jiana, Yao Yaoa, Zheng Yuea, Yang Fana, Ni Yi-Qianga, He Zhi-Yuana, Shen Zhena, Zhou Gui-Lina, Zhou De-Qiua, Wu Zhi-Shenga, Zhang Bai-Junb, Liu Yanga
a School of Physics and Engineering, Institute of Power Electronics and Control Technology, Sun Yat-Sen University, Guangzhou 510275, China;
b State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China

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