Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs

doi:10.1088/1674-1056/24/8/088501

Abstract The effects of back gate bias (BGEs) on radio-frequency (RF) performances in PD SOI nMOSFETs are presented in this paper. Floating body (FB) device, T-gate body-contact (TB) device, and tunnel diode body-contact (TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency (f_T), maximum frequency of oscillation (f_max), etc. Because of the lack of a back gate conducting channel, the drain conductance (g_d) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance (g_m) of TDBC is almost independent of back gate bias. The values of f_T of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.

Keywords: silicon-on-insulator (SOI) back gate bias tunnel diode body contact radio-frequency (RF)

Received: 15 December 2014
Revised: 03 March 2015
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	73.43.Jn	(Tunneling)
	72.30.+q	(High-frequency effects; plasma effects)

Corresponding Authors: Chen Jing
E-mail: jchen@mail.sim.ac.cn

Cite this article:

Lü Kai (吕凯), Chen Jing (陈静), Luo Jie-Xin (罗杰馨), He Wei-Wei (何伟伟), Huang Jian-Qiang (黄建强), Chai Zhan (柴展), Wang Xi (王曦) Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs 2015 Chin. Phys. B 24 088501

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Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs

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