Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene

doi:10.1088/1674-1056/24/8/087101

Abstract Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In the presence of both electron–hole puddles and band gap induced by charged impurities, we calculate low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene. Our calculated conductivity results are in excellent agreement with published experimental data in all compensated gate voltage regime of study by using potential fluctuation parameter as only one free fitting parameter, indicating that both electron–hole puddles and band gap induced by charged impurities play an important role in carrier transport. More importantly, we also find that the conductivity not only depends strongly on the total charged impurity density, but also on the top layer charged impurity density, which is different from that obtained by neglecting the opening of band gap, especially for bilayer graphene with high top layer charged impurity density.

Keywords: bilayer graphene tunable band gap electron–hole puddles charged impurity scattering

Received: 09 September 2014
Revised: 20 March 2015
Accepted manuscript online:

PACS:	71.20.-b	(Electron density of states and band structure of crystalline solids)
	72.20.Dp	(General theory, scattering mechanisms)
	72.20.Fr	(Low-field transport and mobility; piezoresistance)

Corresponding Authors: Hu Bo
E-mail: hubo2011@semi.ac.cn

Cite this article:

Hu Bo (胡波) Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene 2015 Chin. Phys. B 24 087101

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Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene

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