Chin. Phys. B
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Chin. Phys. B  2015, Vol. 24 Issue (6): 068506    DOI: 10.1088/1674-1056/24/6/068506
TOPICAL REVIEW --- III-nitride optoelectronic materials and devices Current Issue| Next Issue| Archive| Adv Search |
Progress and prospects of GaN-based LEDs using nanostructures
Zhao Li-Xia, Yu Zhi-Guo, Sun Bo, Zhu Shi-Chao, An Ping-Bo, Yang Chao, Liu Lei, Wang Jun-Xi, Li Jin-Min
Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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