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Chin. Phys. B, 2015, Vol. 24(6): 066105    DOI: 10.1088/1674-1056/24/6/066105
Special Issue: TOPICAL REVIEW — III-nitride optoelectronic materials and devices
TOPICAL REVIEW—III-nitride optoelectronic materials and devices Prev   Next  

Progress in bulk GaN growth

Xu Ke (徐科)a b, Wang Jian-Feng (王建峰)a b, Ren Guo-Qiang (任国强)a b
a Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
b Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China
Abstract  

Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of GaN film. The growth mechanisms of GaN by Na-flux and ammonothermal methods are compared with those of HVPE. The mechanical behaviors of dislocation in bulk GaN are investigated through nano-indentation and high-space resolution surface photo-voltage spectroscopy. In the last part, the progress in growing some devices on GaN substrate by homo-epitaxy is introduced.

Keywords:  nitride semiconductor      bulk GaN      hydride vapor phase epitaxy (HVPE)      dislocation  
Received:  04 May 2015      Revised:  11 May 2015      Accepted manuscript online: 
PACS:  61.72.uj (III-V and II-VI semiconductors)  
  81.05.Ea (III-V semiconductors)  
  81.10.Bk (Growth from vapor)  
  61.72.-y (Defects and impurities in crystals; microstructure)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant Nos. 61325022 and 11435010), the National Basic Research Program of China (Grant No. 2012CB619305), and the National High Technology Research and Development Program of China (Grant No. 2014AA03260).

Corresponding Authors:  Xu Ke     E-mail:  kxu2006@sinano.ac.cn
About author:  61.72.uj; 81.05.Ea; 81.10.Bk; 61.72.-y

Cite this article: 

Xu Ke (徐科), Wang Jian-Feng (王建峰), Ren Guo-Qiang (任国强) Progress in bulk GaN growth 2015 Chin. Phys. B 24 066105

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