Chin. Phys. B
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Chin. Phys. B  2015, Vol. 24 Issue (7): 077307    DOI: 10.1088/1674-1056/24/7/077307
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors
Qian Hui-Mina b, Yu Guanga b, Lu Haia b, Wu Chen-Feia b, Tang Lan-Fenga b, Zhou Donga b, Ren Fang-Fanga b, Zhang Ronga b, Zheng You-Liaoa b, Huang Xiao-Mingc
a Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and Schoolof Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
c Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

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