Subthreshold behavior of AlInSb/InSb high electron mobility transistors

doi:10.1088/1674-1056/24/7/076105

Abstract We propose a scaling theory for single gate AlInSb/InSb high electron mobility transistors (HEMTs) by solving the two-dimensional (2D) Poisson equation. In our model, the effective conductive path effect (ECPE) is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Ø_deff,min and the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.

Keywords: scaling theory subthreshold behavior effective conducting path effect short channel effect

Received: 16 October 2014
Revised: 13 February 2015
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	68.65.Fg	(Quantum wells)
	73.21.-b	(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)

Fund: Project supported by the Council of Scientific & Industrial Research (CSIR), Government of India under the SRF Scheme (Sanction Letter No: 08/237(0005)/2012-EMR-I).

Corresponding Authors: S. Theodore Chandra
E-mail: theodore@tce.edu

Cite this article:

S. Theodore Chandra, N. B. Balamurugan, G. Lakshmi Priya, S. Manikandan Subthreshold behavior of AlInSb/InSb high electron mobility transistors 2015 Chin. Phys. B 24 076105

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