Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices

doi:10.1088/1674-1056/24/5/058501

Abstract

Asymmetric resistive switching processes were observed in W:AlO_x/WO_y bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under -1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carried out to understand these significant differences in switching time. A redox reaction model in the W:AlO_x/WO_y device structure is proposed to explain this switching time difference.

Keywords: RRAM tungsten oxide asymmetric resistive switching

Received: 01 November 2014
Revised: 02 December 2014
Accepted manuscript online:

PACS:

85.30.De

(Semiconductor-device characterization, design, and modeling)

Corresponding Authors: Wu Hua-Qiang
E-mail: wuhq@tsinghua.edu.cn

About author: 85.30.De

Cite this article:

Wu Hua-Qiang (吴华强), Wu Ming-Hao (吴明昊), Li Xin-Yi (李辛毅), Bai Yue (白越), Deng Ning (邓宁), Yu Zhi-Ping (余志平), Qian He (钱鹤) Asymmetric resistive switching processes in W:AlO_x/WO_y bilayer devices 2015 Chin. Phys. B 24 058501

[1]	Lee M J, Lee C B, Lee D, Lee S R, Man C, Ji H H, Kim Y B, Kim C J, Seo D H, Seo S, Chung U I, Yoo I K and Kim K 2011 Nat. Mater. 10 625
[2]	Wong H S P, Lee H Y, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T and Tsai M J 2012 IEEE Proc. 100 1951
[3]	Govoreanu B, Kar G S, Chen Y, et al. 2011 IEDM Tech. Dig. 729
[4]	Chien W C, Lee M H, Lee F M, Lin Y Y, Lung H L, Hsieh K Y and Lu C Y 2011 IEDM Tech. Dig. 725
[5]	Chien W C, Chen Y R, Chen Y C, Chuang A T H, Lee F M, Lin Y Y, Lai E K, Shih Y H, Hsieh K Y and Lu CY 2010 IEDM Tech. Dig. 440
[6]	Alexandrov A S, Bratkovsky A M, Bridle B, Savel S E, Strukov D B and Williams R S 2011 Appl. Phys. Lett. 99 202104
[7]	Ielmini D 2011 IEDM Tech. Dig. 409
[8]	Li Y T, LV S B, Lv H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian WT, Liu S and Liu M 2011 Chin. Phys. B 20 017305
[9]	Ielmini D 2013 Resistive Switching Models by Ion Migration in Metal Oxides (New York: Springer) p. 169
[10]	Long S B, Lian X B, Cagli C, Cartoixa X, Riccardo R, Enrique M, Jimenez D, Luca P, Liu M and Sunñé J 2013 Appl. Phys. Lett. 102 183505
[11]	Long S B, Lian X B, Ye T B, Cagli C, Perniola L, Miranda E, Liu M and Suñé J 2013 IEEE Electron Dev. Lett. 34 623
[12]	Larentis S, Nardi F, Balatti S, Gilmer D C and Ielmini D 2012 IEEE Trans. Electron Dev. 59 2468
[13]	Ramu A T and Strukov D B 2013 IEEE Trans. Electron Dev. 60 1938
[14]	Long S B, Perniola L, Cagli C, Buckley J, Lian X J, Miranda E, Pan F, Liu M and Sunñé J 2013 Sci. Rep. 3 1
[15]	Ielmini D 2011 IEEE Trans. Electron Dev. 58 4309
[16]	Chen Y Y, Govoreanu B, Goux L, Degraeve R, Fantini A, Kar G S, Wouters D J, Groeseneken G, Kittl J A, Jurczak M and Altimime L 2012 IEEE Trans. Electron Dev. 59 3243
[17]	Bai Y, Wu H Q, Zhang Y, Wu M H, Zhang J Y, Deng N and Qian H 2013 Appl. Phys. Lett. 102 173503
[18]	Zhang Y, Wu H Q, Bai Y, Chen A, Yu Z P, Zhang J Y and Qian H 2013 Appl. Phys. Lett. 102 233502
[19]	Kim S, Kim S J, Kim K M, Lee S R, Chang M, Cho E, Kim Y B, Kim C J, Chung U I and Yoo I K 2013 Scientific Reports 3 1680
[20]	David W O 2011 Principles of Modern Chemistry (7th edn.) p. 546

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