Chin. Phys. B
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Chin. Phys. B  2015, Vol. 24 Issue (5): 057702    DOI: 10.1088/1674-1056/24/5/057702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Threshold switching uniformity in In2Se3 nanowire-based phase change memory
Chen Jiana b, Du Gangb, Liu Xiao-Yanb
a Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
b Institute of Microelectronics, Peking University, Beijing 100871, China

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