Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

doi:10.1088/1674-1056/24/5/057303

Abstract We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (～ 10⁹). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current.

Keywords: heterostructure field effect transistor (HFET) GaN on Si interlayers high on/off ratio

Received: 09 October 2014
Revised: 24 December 2014
Accepted manuscript online:

PACS:	73.40.-c	(Electronic transport in interface structures)
	73.61.Ey	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.55.Cr	(III-V semiconductors)

Fund: Project Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

Corresponding Authors: Liu Yang
E-mail: liuy69@mail.sysu.edu.cn

About author: 73.40.-c; 73.61.Ey; 81.15.Gh; 78.55.Cr

Cite this article:

Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Yao Yao (姚尧), Yang Fan (杨帆), Zhou De-Qiu (周德秋), Zhou Gui-Lin (周桂林), Shen Zhen (沈震), Zhong Jian (钟健), Zheng Yue (郑越), Zhang Bai-Jun (张佰君), Liu Yang (刘扬) Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate 2015 Chin. Phys. B 24 057303

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Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

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