Chin. Phys. B
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Chin. Phys. B  2015, Vol. 24 Issue (3): 038102    DOI: 10.1088/1674-1056/24/3/038102
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Modeling and experiments of N-doped vanadium oxide prepared by a reactive sputtering process
Wang Taoa, Yu Hea, Dong Xianga, Jiang Ya-Donga, Wu Rui-Linb
a School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;
b Center for Plasma Material Interaction, Department of Nuclear, Plasma and Radiological Engineering, University of Illinois at Urbana-Champaign, IL 61801, USA

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