Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiNx matrix by the influence of near-interface oxide traps

doi:10.1088/1674-1056/24/1/017305

Abstract

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals (Si-NCs) embedded in SiN_x floating gate MOS structures. The capacitance-voltage (C-V), current-voltage (I-V), and admittance-voltage (G-V) measurements are used to investigate the charging characteristics. It is found that the maximum flat band voltage shift (ΔV_FB) due to full charged holes (～ 6.2 V) is much larger than that due to full charged electrons (～ 1 V). The charging displacement current peaks of electrons and holes can be also observed by the I-V measurements, respectively. From the G-V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the SiO₂/Si-substrate interface. Combining the results of C-V and G-V measurements, we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism. The evolution of G-V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.

Keywords: silicon nanocrystals memory different charging of electrons and holes oxide traps admittance-voltage characteristics

Received: 11 July 2014
Revised: 17 October 2014
Accepted manuscript online:

PACS:	73.63.Bd	(Nanocrystalline materials)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.90.+f	(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)

Fund:

Project supported by the National Basic Research Program of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant No. 11374153).

Corresponding Authors: Chen Kun-Ji
E-mail: kjchen@nju.edu.cn

Cite this article:

Fang Zhong-Hui (方忠慧), Jiang Xiao-Fan (江小帆), Chen Kun-Ji (陈坤基), Wang Yue-Fei (王越飞), Li Wei (李伟), Xu Jun (徐骏) Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps 2015 Chin. Phys. B 24 017305

[1]	Walter R J, Kit P G, Casperson J D, Atwater H A, Lindstedt R, Giorgi M and Bourianoff G 2004 Appl. Phys. Lett. 85 2622
[2]	Likharev K K 1999 Proc. IEEE 87 606
[3]	Dutta A, Oda S, Fu Y and Willander M 2000 Jpn. J. Appl. Phys. 39 4647
[4]	Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbe E F and Chan K 1996 Appl. Phys. Lett. 68 1377
[5]	Shi Y, Saito K, Ishikuro H and Hiramoto T 1998 J. Appl. Phys. 84 2358
[6]	Huang S Y and Oda S 2005 Appl. Phys. Lett. 87 173107
[7]	Ioannou-Sougleridis V, Nassiopoulou A G and Travlos A 2003 Nanotechnology 14 1174
[8]	Ioannou-Sougleridis V, Dimitrackis P, Vamvakas V E, Normand P, Bonafos C, Schamm S, Mouti A, Assayag G B and Paillard V 2007 Nanotechnology 18 215204
[9]	Miyazaki S, Makihara K and Ikeda M 2008 Thin Solid Films 517 41
[10]	Qian X Y, Chen K J, Huang J, Wang Y F, Fang Z H, Xu J and Huang X F 2013 Chin. Phys. Lett. 30 077303
[11]	Cho C H, Kim B H, Kim S K and Park S J 2010 Appl. Phys. Lett. 96 223110
[12]	Lien Y C, Shieh J M, Huang W H, Tu C H, Wang C, Shen C H, Dai B T, Pan C L, Hu C and Yang F L 2012 Appl. Phys. Lett. 100 143501
[13]	Horváth Z J, Basa P, Molnár K Z, Molnár G, Jászi T and Pap A E 2013 Physica E 51 104
[14]	Chen K, Chen K J, Zhang L and Huang X F 2004 Journal of Non- Crystalline Solids 338 131
[15]	Fang Z H, Chen K J, Ma J Y and Liu G Y 2010 Proceedings of 2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology pp. 1581-1583
[16]	Loannou-Sougleridis V and Nassiopoulou A G 2009 J. Appl. Phys. 106 054508
[17]	Beaumont A and Souifi A 2009 Solid-State Electronics 53 42
[18]	Nicollian E H and Brews J R 1982 MOS Physics and Technology (New York, Wiley) pp. 176-324, 285-318, 814-829
[19]	Ng T H, Chim W K and Choi W K 2006 Appl. Phys. Lett. 88 113112
[20]	Chiang K H, Lu S W, Peng Y H, Kuan C H and Tsai C S 2008 J. Appl. Phys. 104 014506

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Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiNx matrix by the influence of near-interface oxide traps

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Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps