Effects of GaN cap layer thickness on an AlN/GaN heterostructure

doi:10.1088/1674-1056/23/12/127104

Abstract In this study, we investigate the effects of GaN cap layer thickness on the two-dimensional electron gas (2DEG) electron density and 2DEG electron mobility of AlN/GaN heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the GaN cap layer thickness of an AlN/GaN heterostructure has influences on the 2DEG electron density and the electron mobility. For the AlN/GaN heterostructures with a 3-nm AlN barrier layer, the optimized thickness of the GaN cap layer is around 4 nm and the strained a-axis lattice constant of the AlN barrier layer is less than that of GaN.

Keywords: AlN/GaN heterostructure 2DEG GaN cap layer a-axis lattice constant

Received: 03 June 2014
Revised: 05 August 2014
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	77.22.Ej	(Polarization and depolarization)
	77.80.bn	(Strain and interface effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

Corresponding Authors: Lin Zhao-Jun
E-mail: linzj@sdu.edu.cn

Cite this article:

Zhao Jing-Tao (赵景涛), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志宏), Yang Ming (杨铭) Effects of GaN cap layer thickness on an AlN/GaN heterostructure 2014 Chin. Phys. B 23 127104


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Effects of GaN cap layer thickness on an AlN/GaN heterostructure

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