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Chin. Phys. B, 2014, Vol. 23(12): 126101    DOI: 10.1088/1674-1056/23/12/126101
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device

M. Ismaila b, M. W. Abbasa, A. M. Ranaa, I. Taliba, E. Ahmeda, M. Y. Nadeema, T. L. Tsaib, U. Chandb, N. A. Shahc, M. Hussaind, A. Aziza, M. T. Bhattia
a Department of Physics, Bahauddin Zakariya University, Multan-60800, Pakistan;
b Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan, China;
c Thin Films Technology Research Laboratory, Department of Physics, COMSATS Institute of Information Technology, Islamabad-45320, Pakistan;
d Center for High Energy Physics, University of Punjab, Lahore-54590, Pakistan
Abstract  Highly repeatable multilevel bipolar resistive switching in Ti/CeOx/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of CeO2 films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times (>104 s) with an acceptable resistance ratio (~ 102), enables the device for its applications in future non-volatile resistive random access memories (RRAMs). Based on the unique distribution characteristics of oxygen vacancies in CeOx films, the possible mechanism of multilevel resistive switching in CeOx RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.
Keywords:  multilevel resistive switching      Schottky emission      cerium oxide      oxygen vacancy  
Received:  21 May 2014      Revised:  04 July 2014      Accepted manuscript online: 
PACS:  61.05.cp (X-ray diffraction)  
  73.40.Rw (Metal-insulator-metal structures)  
  73.50.-h (Electronic transport phenomena in thin films)  
  77.22.Jp (Dielectric breakdown and space-charge effects)  
Corresponding Authors:  M. Ismail     E-mail:  ismailmalikbzu10@gmail.com

Cite this article: 

M. Ismail, M. W. Abbas, A. M. Rana, I. Talib, E. Ahmed, M. Y. Nadeem, T. L. Tsai, U. Chand, N. A. Shah, M. Hussain, A. Aziz, M. T. Bhatti Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device 2014 Chin. Phys. B 23 126101

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