Radio-frequency transistors from millimeter-scale graphene domains

doi:10.1088/1674-1056/23/11/117201

Abstract

Graphene is a new promising candidate for application in radio-frequency (RF) electronics due to its excellent electronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors (RF-FETs). Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO₂/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum oscillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.

Keywords: millimeter-scale graphene domain radio-frequency transistor cut-off frequency maximum oscillation frequency

Received: 25 March 2014
Revised: 05 May 2014
Accepted manuscript online:

PACS:	72.20.Fr	(Low-field transport and mobility; piezoresistance)
	72.80.Vp	(Electronic transport in graphene)
	87.50.S-

Fund:

Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00600, 2011CBA00601, and 2013CBA01604), the National Natural Science Foundation of China (Grant No. 60625403), and the National Science and Technology Major Project of China (Grant No. 2011ZX02707).

Corresponding Authors: Fu Yun-Yi
E-mail: yyfu@pku.edu.cn

Cite this article:

Wei Zi-Jun (魏子钧), Fu Yun-Yi (傅云义), Liu Jing-Bo (刘竞博), Wang Zi-Dong (王紫东), Jia Yue-Hui (贾越辉), Guo Jian (郭剑), Ren Li-Ming (任黎明), Chen Yuan-Fu (陈远富), Zhang Han (张酣), Huang Ru (黄如), Zhang Xing (张兴) Radio-frequency transistors from millimeter-scale graphene domains 2014 Chin. Phys. B 23 117201

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Radio-frequency transistors from millimeter-scale graphene domains

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