Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2014, Vol. 23 Issue (11): 117305    DOI: 10.1088/1674-1056/23/11/117305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Resistive switching characteristics of Ti/ZrO2/Pt RRAM device
Lei Xiao-Yia, Liu Hong-Xiaa, Gao Hai-Xiaa, Yang Ha-Nib, Wang Guo-Mingc d, Long Shi-Bingc, Ma Xiao-Huaa b, Liu Mingc
a Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
c Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
d Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn