Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (11): 118503    DOI: 10.1088/1674-1056/23/11/118503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation
Xiao Yaoa, Guo Hong-Xiaa b, Zhang Feng-Qia, Zhao Wena, Wang Yan-Pinga, Zhang Ke-Yinga, Ding Li-Lia, Fan Xuec, Luo Yin-Honga, Wang Yuan-Minga
a State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
b Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi 830011, China;
c State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 61005, China

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