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Chin. Phys. B, 2014, Vol. 23(11): 118503    DOI: 10.1088/1674-1056/23/11/118503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Xiao Yao (肖尧)a, Guo Hong-Xia (郭红霞)a b, Zhang Feng-Qi (张凤祁)a, Zhao Wen (赵雯)a, Wang Yan-Ping (王燕萍)a, Zhang Ke-Ying (张科营)a, Ding Li-Li (丁李利)a, Fan Xue (范雪)c, Luo Yin-Hong (罗尹虹)a, Wang Yuan-Ming (王园明)a
a State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China;
b Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi 830011, China;
c State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 61005, China
Abstract  Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.
Keywords:  single event upset      total dose      static random access memory      imprint effect  
Received:  13 February 2014      Revised:  14 May 2014      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201306).
Corresponding Authors:  Xiao Yao     E-mail:  nint_xiaoyao@foxmail.com

Cite this article: 

Xiao Yao (肖尧), Guo Hong-Xia (郭红霞), Zhang Feng-Qi (张凤祁), Zhao Wen (赵雯), Wang Yan-Ping (王燕萍), Zhang Ke-Ying (张科营), Ding Li-Li (丁李利), Fan Xue (范雪), Luo Yin-Hong (罗尹虹), Wang Yuan-Ming (王园明) Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation 2014 Chin. Phys. B 23 118503

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