Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

doi:10.1088/1674-1056/23/11/117803

Abstract

Low temperature photoluminescence (PL) measurements have been performed for a set of GaN/Al_xGa_1-xN quantum wells (QWs). The experimental results show that the optical full width at half maximum (FWHM) increases relatively rapidly with increasing Al composition in the Al_xGa_1-xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM's broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.

Keywords: GaN/AlGaN quantum wells interface roughness optical full width at half maximum

Received: 13 March 2014
Revised: 05 May 2014
Accepted manuscript online:

PACS:	78.67.-n	(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
	78.66.Fd	(III-V semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund:

Project supported by the National Basic Research Program of China (Grant No. 2012CB619306) and the National High Technology Research and Development Program of China (Grant No. 2011AA03A101).

Corresponding Authors: Liu Gui-Peng
E-mail: liugp@semi.ac.cn

Cite this article:

Wang Wei-Ying (王维颖), Liu Gui-Peng (刘贵鹏), Jin Peng (金鹏), Mao De-Feng (毛德丰), Li Wei (李维), Wang Zhan-Guo (王占国), Tian Wu (田武), Chen Chang-Qing (陈长清) Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells 2014 Chin. Phys. B 23 117803

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Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

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