Precursor evolution and growth mechanism of BTO/YBCO films by TFA-MOD process

doi:10.1088/1674-1056/23/10/107402

Abstract

In this study, BaTiO₃ (BTO)-doped YBCO films are prepared on LaAlO₃ (100) single-crystal substrates by metal-organic decomposition (MOD) using trifluoroacetate (TFA) precursor solutions. The critical current density (J_c) of BTO/YBCO film is as high as 10 MA/cm² (77 K, 0 T). The BTO peak is found in the X-ray diffraction (XRD) pattern of a final YBCO superconductivity film. Moreover, a comprehensive study of the precursor evolution is conducted mainly by X-ray analysis and μ-Raman spectroscopy. It is found that the TFA begins to decompose at the beginning of the thermal process, and then further decomposes as temperature increases, and at 700℃ BTO nanoparticles begin to appear. It suggests that the YBCO film embedded with BTO nanoparticles, whose critical current density (J_c) is enhanced, is successfully prepared by an easily scalable chemical solution deposition technique.

Keywords: YBa₂Cu₃O_7-x precursor evolution BaTiO₃ TFA-MOD

Received: 18 February 2014
Revised: 08 April 2014
Accepted manuscript online:

PACS:	74.78.-w	(Superconducting films and low-dimensional structures)
	81.16.Dn	(Self-assembly)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 51002149 and 51272250) and the National Basic Research Program of China (Grant No. 2011CBA00105).

Corresponding Authors: Ding Fa-Zhu,Gu Hong-Wei
E-mail: dingfazhu@mail.iee.ac.cn;guhw@mail.iee.ac.cn

About author: 74.78.-w; 81.16.Dn

Cite this article:

Wang Hong-Yan (王洪艳), Ding Fa-Zhu (丁发柱), Gu Hong-Wei (古宏伟), Zhang Teng (张腾), Peng Xing-Yu (彭星煜) Precursor evolution and growth mechanism of BTO/YBCO films by TFA-MOD process 2014 Chin. Phys. B 23 107402


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Precursor evolution and growth mechanism of BTO/YBCO films by TFA-MOD process

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