Effects of different dopants on switching behavior of HfO2-based resistive random access memory

doi:10.1088/1674-1056/23/10/107306

Abstract In this study the effects of doping atoms (Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO₂-based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO₂ depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO₂ devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO₂ devices, and nitrogen/oxygen vacancy filaments for N-doped HfO₂ devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.

Keywords: RRAM conductive filament doping

Received: 04 July 2014
Revised: 04 August 2014
Accepted manuscript online:

PACS:	73.40.Ns	(Metal-nonmetal contacts)
	85.35.-p	(Nanoelectronic devices)
	85.90.+h	(Other topics in electronic and magnetic devices and microelectronics)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA010403).

Corresponding Authors: Deng Ning
E-mail: ningdeng@tsinghua.edu.cn

About author: 73.40.Ns; 85.35.-p; 85.90.+h

Cite this article:

Deng Ning (邓宁), Pang Hua (庞华), Wu Wei (吴畏) Effects of different dopants on switching behavior of HfO₂-based resistive random access memory 2014 Chin. Phys. B 23 107306


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Effects of different dopants on switching behavior of HfO2-based resistive random access memory

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Effects of different dopants on switching behavior of HfO₂-based resistive random access memory