Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

doi:10.1088/1674-1056/23/10/106102

Abstract Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device.

Keywords: total dose irradiation static random access memory pattern imprinting deep sub-micron

Received: 12 February 2014
Revised: 07 April 2014
Accepted manuscript online:

PACS:	61.80.Ed	(γ-ray effects)
	61.82.Fk	(Semiconductors)
	85.30.Tv	(Field effect devices)
	07.85.-m	(X- and γ-ray instruments)

Corresponding Authors: Yu Xue-Feng
E-mail: yuxf@ms.xjb.ac.cn

About author: 61.80.Ed; 61.82.Fk; 85.30.Tv; 07.85.-m

Cite this article:

Zheng Qi-Wen (郑齐文), Yu Xue-Feng (余学峰), Cui Jiang-Wei (崔江维), Guo Qi (郭旗), Ren Di-Yuan (任迪远), Cong Zhong-Chao (丛忠超), Zhou Hang (周航) Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation 2014 Chin. Phys. B 23 106102


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