Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy

doi:10.1088/1674-1056/23/9/096101

Abstract Silicon nanopillars are fabricated by inductively coupled plasma (ICP) dry etching with the cesium chloride (CsCl) islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus (P) diffusion by liquid dopant source (POCl₃) at 870℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy (XPS) is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and-0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.

Keywords: X-ray photoelectron spectroscopy (XPS) photoelectric characteristic P-N junction silicon nanopillar

Received: 18 December 2013
Revised: 05 March 2014
Accepted manuscript online:

PACS:	61.05.cp	(X-ray diffraction)
	62.23.Hj	(Nanowires)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50972144).

Corresponding Authors: Yi Fu-Ting
E-mail: yift@ihep.ac.cn

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Liu Jing (刘静), Wang Jia-Ou (王嘉鸥), Yi Fu-Ting (伊福廷), Wu Rui (吴蕊), Zhang Nian (张念), Ibrahim Kurash (奎热西) Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy 2014 Chin. Phys. B 23 096101

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Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy

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