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Chin. Phys. B, 2014, Vol. 23(9): 097304    DOI: 10.1088/1674-1056/23/9/097304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Intersubband transitions in InxAl(1-x)N/InyGa(1-y)Nquantum well operating at 1.55 μm

Hassen Dakhlaoui
Department of Physics, College of Science for Girls, Dammam 31113, Saudi Arabia
Abstract  In this paper, we theoretically study the effects of doping concentration ND and an external electric field on the intersubband transitions in InxAl(1-x)N/InyGa(1-y)N single quantum well by solving the Schrödinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions (E2-E1), (E3-E1), and (E3-E2) are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration ND exists for which the transition 0.8 eV (1.55 μm) is carried out. Finally, the dependence of the optical absorption α 13 (ω) on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.
Keywords:  intersubband transition      delta doping      InGaN/GaN quantum well  
Received:  27 January 2014      Revised:  31 March 2014      Accepted manuscript online: 
PACS:  73.21.Fg (Quantum wells)  
  73.50.Dn (Low-field transport and mobility; piezoresistance)  
  73.50.Dn (Low-field transport and mobility; piezoresistance)  
Corresponding Authors:  Hassen Dakhlaoui     E-mail:  h_dakhlaoui@yahoo.fr

Cite this article: 

Hassen Dakhlaoui Intersubband transitions in InxAl(1-x)N/InyGa(1-y)Nquantum well operating at 1.55 μm 2014 Chin. Phys. B 23 097304

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