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Chin. Phys. B, 2014, Vol. 23(9): 097305    DOI: 10.1088/1674-1056/23/9/097305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

Zhao Sheng-Lei (赵胜雷)a, Wang Yuan (王媛)b, Yang Xiao-Lei (杨晓蕾)b, Lin Zhi-Yu (林志宇)a, Wang Chong (王冲)a, Zhang Jin-Cheng (张进成)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a
a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China
Abstract  In this paper, we present the combination of drain field plate (FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors (HEMTs). Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage (VRB) and the forward blocking voltage (VFB). The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. VRB and VFB were improved from-67 V and 134 V to-653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.
Keywords:  AlGaN/GaN high-electron mobility transistors      reverse blocking capability      drain field plate      Schottky drain  
Received:  02 January 2014      Revised:  21 March 2014      Accepted manuscript online: 
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.61.Ey (III-V semiconductors)  
  78.30.Fs (III-V and II-VI semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002 and 61106106) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).
Corresponding Authors:  Hao Yue     E-mail:  yhao@xidian.edu.cn

Cite this article: 

Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors 2014 Chin. Phys. B 23 097305

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