Chin. Phys. B
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Chin. Phys. B  2014, Vol. 23 Issue (9): 097102    DOI: 10.1088/1674-1056/23/9/097102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
An analytic model for gate-all-around silicon nanowire tunneling field effect transistors
Liu Yinga b, He Jina b, Chan Mansunb, Du Cai-Xiac, Ye Yunb, Zhao Weib, Wu Wenb, Deng Wan-Lingb, Wang Wen-Pingb
a School of Electronics and Computer Science, Peking University, Beijing 100871, China;
b Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen-Hong Kong Institution, Shenzhen 518057, China;
c Shenzhen Huayue Terascale Chip Electronic Limited Co. Ltd., Shenzhen 523620, China

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