Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

doi:10.1088/1674-1056/23/9/096802

Abstract Graphene on gallium nitride (GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5-6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1 Ω/square, which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.

Keywords: graphene photoluminescence gallium nitride chemical vapor deposition Raman spectroscopy

Received: 29 December 2013
Revised: 21 March 2014
Accepted manuscript online:

PACS:	68.65.Pq	(Graphene films)
	78.55.Cr	(III-V semiconductors)
	81.05.ue	(Graphene)
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61274040 and 51102226), the National Basic Research Program of China (Grant No. 2011CB301904), the National High Technology Program of China (Grant Nos. 2011AA03A103 and 2011AA03A105), the National Science Foundation of China (Grant Nos. 10774032 and 90921001), and the Key Knowledge Innovation Project of the Chinese Academy of Sciences on Water Science Research, Instrument Developing Project of the Chinese Academy of Sciences (Grant No. Y2010031).

Corresponding Authors: Duan Rui-Fei, Sun Lian-Feng
E-mail: duanrf@semi.ac.cn;slf@nanoctr.cn

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Zhao Yun (赵云), Wang Gang (王钢), Yang Huai-Chao (杨怀超), An Tie-Lei (安铁雷), Chen Min-Jiang (陈闽江), Yu Fang (余芳), Tao Li (陶立), Yang Jian-Kun (羊建坤), Wei Tong-Bo (魏同波), Duan Rui-Fei (段瑞飞), Sun Lian-Feng (孙连峰) Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst 2014 Chin. Phys. B 23 096802

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Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

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