Complete coverage of reduced graphene oxide on silicon dioxide substrates

doi:10.1088/1674-1056/23/8/088104

Abstract Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (< US$1) and portability (millimetre scale). However the large deviations in the electrical resistivity of this fabricated material prevent it from being used widely. After an ethanol chemical vapor deposition (CVD) post-treatment to graphene oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices.

Keywords: graphene oxide reduced graphene oxide graphene growth field effect transistor

Received: 04 September 2013
Revised: 18 February 2014
Accepted manuscript online:

PACS:	81.05.ue	(Graphene)
	68.65.Pq	(Graphene films)
	85.30.Tv	(Field effect devices)
	68.55.ag	(Semiconductors)

Fund: Project supported by the Institute for Sports Research (ISR) of Nanyang Technological University (NTU), the National Institute for Health Research (NIHR) Diet, Lifestyle & Physical Activity Biomedical Research Unit based at University Hospitals of Leicester and Loughborough University, and the International Graduate School Bio-Nano-Tech; a Joint Ph D Program of University of Natural Resources and Life Sciences Vienna (BOKU), the Austrian Institute of Technology (AIT) and NTU.

Corresponding Authors: Alfred Tok Iing Yoong
E-mail: MIYTok@ntu.edu.sg

Cite this article:

Huang Jingfeng, Melanie Larisika, Chen Hu, Steve Faulkner, Myra A. Nimmo, Christoph Nowak, Alfred Tok Iing Yoong Complete coverage of reduced graphene oxide on silicon dioxide substrates 2014 Chin. Phys. B 23 088104

[1]	Huang J, Harvey J, Fam W H D, Nimmo M A and Tok I Y A 2013 Procedia Engineering 60 195
[2]	Huang J, Harvey J, Chen H, Nimmo M A and Tok I Y A 2013 "Fully Organic Graphene Oxide-based Sensor with Integrated Pump for Sodium Detection", in: Conference Proceeding of icSports, (Vilamoura, Portugal) pp. 83-88
[3]	Huang J, Larisika M, Nowak C and Tok I Y A 2014 New Methods in Aqueous Graphene (Graphene Oxide) Synthesis for Biosensor Devices, Vol. 1 (Oxford, UK: Taylor & Francis Group)
[4]	Lu G, Park S, Yu K, Ruoff R S, Ocola L E, Rosenmann D and Chen J 2011 ACS Nano 5 1154
[5]	Larisika M, Huang J, Tok A, Knoll W and Nowak C 2012 Mater. Chem. Phys. 136 304
[6]	Huang J, Larisika M, Fam W H D, He Q, Nimmo M A, Nowak C and Tok I Y A 2013 Nanoscale 5 2945
[7]	Huang J, Tok A I Y and Hng H H 2013 Nanostructured ZnO Thermoelectric Materials for Microelectronics (Germany: LAMBERT Academic Publishing)
[8]	Huang J, Fam D, He Q, Chen H, Zhan D, Faulkner S H, Nimmo M A and Yoong Tok A I 2014 J. Mater. Chem. C 2 109
[9]	Li J, He Y, Han Y, Liu K, Wang J, Li Q, Fan S and Jiang K 2012 Nano Lett. 12 4095
[10]	Su C Y, Xu Y, Zhang W, Zhao J, Tang X, Tsai C H and Li L J 2009 Chem. Mater. 21 5674
[11]	Yang D, Velamakanni A, Bozoklu G, Park S, Stoller M, Piner R D, Stankovich S, Jung I, Field D A, Ventrice C A Jr and Ruoff R S 2009 Carbon 47 145
[12]	Zhang Y, Li Z, Kim P, Zhang L and Zhou C 2012 ACS Nano 6 126
[13]	Fam D W H, Palaniappan A, Tok A I Y, Liedberg B and Moochhala S M 2011 Sensors and Actuators B: Chemical 157 1
[14]	Dreyer D R, Park S, Bielawski C W and Ruoff R S 2010 Chem. Soc. Rev. 39 228
[15]	Mattevi C, Eda G, Agnoli S, Miller S, Mkhoyan K A, Celik O, Mastrogiovanni D, Granozzi G, Garfunkel E and Chhowalla M 2009 Adv. Func. Mater. 19 2577
[16]	Wilson N R, Pandey P A, Beanland R, Young R J, Kinloch I A, Gong L, Liu Z, Suenaga K, Rourke J P, York S J and Sloan J 2009 ACS Nano 3 2547
[17]	Wang G, Yang J, Park J, Gou X, Wang B, Liu H and Yao J 2008 J. Phys. Chem. C 112 8192
[18]	Faulkner S, Spilsbury K, Harvey J, Jackson A, Huang J, Platt M, Tok A and Nimmo M 2014 Eur. J. Appl. Phys. 114 1207

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Complete coverage of reduced graphene oxide on silicon dioxide substrates

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