Please wait a minute...
Chin. Phys. B, 2014, Vol. 23(8): 087702    DOI: 10.1088/1674-1056/23/8/087702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effect of structural parameters of Gaussian repaired pit on light intensity distribution inside KH2PO4 crystal

Xiao Yong (肖勇)a, Chen Ming-Jun (陈明君)a, Cheng Jian (程健)a, Liao Wei (廖威)b, Wang Hai-Jun (王海军)b, Li Ming-Quan (李明全)a
a Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, China;
b Chengdu Fine Optical Engineering Research Center, Chengdu 610041, China
Abstract  KH2PO4 (KDP) crystal with excellent optical properties is a very important element of inertial confinement fusion (ICF) device. However, KDP crystal surface micro-defects severely reduce the crystal laser damage threshold, affecting the crystal service life. In this paper, Gaussian repaired pit is used to replace the crystal surface micro-defects, in order to improve the laser damage resistance of the KDP crystal with surface micro-defects. At first, the physical model of Gaussian repaired pit is built by Fourier model method, and the accuracy of the method is analyzed. It is found that the calculation error can be reduced by increasing the product of the width-period ratio and the truncation constant of the repaired pit. The calculation results about the physical model of Gaussian repaired pit show that the light intensity distribution within the crystal is symmetrical, and there are evidently enhanced light intensity regions in the crystal. Meanwhile, the maximum relative intensity inside the KDP crystal decreases gradually with the increase of the width of the Gaussian repaired pit. Secondly, the Gaussian repaired pits with different widths and the same depth of 20 μm are processed by micro-milling. Their surfaces are very smooth and present the ductile cutting state under the microscope. Finally, the laser damage threshold of the Gaussian repaired pits on the surface of the KDP crystal sample is measured by a 3ω, 6-ns laser. The results show that the maximum threshold of the Gaussian repaired pits is 3.12 J/cm2, which is 60% higher than the threshold of initial damage point, and the laser damage threshold increases with the increase of the width of the Gaussian repaired pit.
Keywords:  KH2PO4      Gaussian repaired pit      Fourier modal method      laser damage threshold  
Received:  23 October 2013      Revised:  20 February 2014      Accepted manuscript online: 
PACS:  77.84.Fa (KDP- and TGS-type crystals)  
  42.60.Jf (Beam characteristics: profile, intensity, and power; spatial pattern formation)  
  02.30.Nw (Fourier analysis)  
  42.70.Mp (Nonlinear optical crystals)  
Fund: Project support by the National Natural Science Foundation of China (Grant No. 51275113) and the National Science and Technology Major Project of China (Grant No. 2013ZX04006011-215).
Corresponding Authors:  Chen Ming-Jun     E-mail:  chenmj@hit.edu.cn

Cite this article: 

Xiao Yong (肖勇), Chen Ming-Jun (陈明君), Cheng Jian (程健), Liao Wei (廖威), Wang Hai-Jun (王海军), Li Ming-Quan (李明全) Effect of structural parameters of Gaussian repaired pit on light intensity distribution inside KH2PO4 crystal 2014 Chin. Phys. B 23 087702

[1] Keefe D 1982 Ann. Rev. Nucl. Part. Sci. 32 391
[2] Lindl J D, McCrory R L and Campbell E M 1992 Phys. Today 45 22
[3] Sasaki T and Yokotani A 1990 J. Cryst. Growth 99 820
[4] Fujioka K, Matsuo S, Kanabe T, Fujita H and Nakatsuka M 1997 J. Cryst. Growth 181 265
[5] Zaitseva N, Atherton J, Rozsa R, Carman L, Smolsky I, Runkel M, Ryon R and James L 1999 J. Cryst. Growth 197 911
[6] Xu Q, Wang J, Li W and Zeng X 1999 Proc. SPIE 3862 236
[7] Yoshida H, Jitsuno T, Fujita H, Nakatsuka M, Yoshimura M, Sasaki T and Yoshida K 2000 Appl. Phys. B 70 195
[8] Guillet F, Bertussi B, Lamaignere L, Leborgne X and Minot B 2007 Proc. SPIE 6720 672008
[9] Geraghty P, Carr W, Draggoo V, Hackel R, Mailhiot C and Norton M 2006 Proc. SPIE 6403 64030Q
[10] Li M Q, Chen M J, An C H, Zhou L, Cheng J, Xiao Y and Jiang W 2012 Chin. Phys. B 21 050301
[11] Chen M J, Cheng J, Li M Q and Xiao Y 2012 Chin. Phys. B 21 064212
[12] Carr C W, Matthews M J, Bude J D and Spaeth M L 2006 Proc. SPIE 6403 64030K
[13] Li L F 1996 J. Opt. Soc. Am. A 13 1870
[14] Zhou C H and Li L F 2004 J. Opt. A 6 43
[15] Bai B F and Li L F 2006 Opt. Common. 262 140
[16] Fu K X, Zhang D Y, Wang Z H, Zhang Q Z and Zhang J 1998 Acta Phys. Sin. 47 1278 (in Chinese)
[17] Ma J Y, Liu S J, Jin Y X, Xu C, Shao J D and Fan Z X 2008 Opt. Commun. 281 3295
[18] Zhang L, Huang L, Fan S J, Bai G X, Li K F, Chen W and Hu L L 2010 Appl. Opt. 49 6668
[19] Xiao Y, Chen M J, Chu X and Tian W L 2013 Int. J. Adv. Manuf. Tech. 67 387
[20] Peng Y F, Guo Y B and Xu Q 2009 Proc. SPIE 7282 72820S
[1] Study of modulation property to incident laser by surface micro-defects on KH2PO4 crystal
Chen Ming-Jun(陈明君), Cheng Jian(程健), Li Ming-Quan(李明全), and Xiao Yong(肖勇) . Chin. Phys. B, 2012, 21(6): 064212.
[2] Formation energies and electronic structures of native point defects in potassium dihydrogen phosphate
Wang Kun-Peng(王坤鹏) and Huang Ye(黄烨) . Chin. Phys. B, 2011, 20(7): 077401.
[3] Study of the near-field modulation property of microwaviness on a KH2PO4 crystal surface
Chen Ming-Jun(陈明君), Jiang Wei(姜伟), Li Ming-Quan(李明全), and Chen Kuan-Neng(陈宽能). Chin. Phys. B, 2010, 19(6): 064203.
[4] Study on tapered crossed subwavelength gratings by Fourier modal method
Chen Xi(陈熙), Zhong Yuan(钟源), Wang Qing(王青), Zhang Ye-Jin(张冶金), and Chen Liang-Hui(陈良惠). Chin. Phys. B, 2010, 19(10): 104101.
No Suggested Reading articles found!