Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction

doi:10.1088/1674-1056/23/8/087307

Abstract The electron transport behavior across the interface plays an important role in determining the performance of optoelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of interfacial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.

Keywords: heterojunction multi-interface nanoheterojunction electron transport silicon nanoporous pillar array (Si-NPA) CdS/Si-NPA

Received: 13 January 2014
Revised: 21 April 2014
Accepted manuscript online:

PACS:	73.63.-b	(Electronic transport in nanoscale materials and structures)
	81.07.-b	(Nanoscale materials and structures: fabrication and characterization)
	73.63.Bd	(Nanocrystalline materials)
	73.63.Rt	(Nanoscale contacts)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176044 and 11074224), the Science and Technology Project for Innovative Scientist of Henan Province, China (Grant No. 1142002510017), and the Science and Technology Project on Key Problems of Henan Province, China (Grant No. 082101510007).

Corresponding Authors: Li Xin-Jian
E-mail: lixj@zzu.edu.cn

Cite this article:

Li Yong (李勇), Wang Ling-Li (王伶俐), Wang Xiao-Bo (王小波), Yan Ling-Ling (闫玲玲), Su Li-Xia (苏丽霞), Tian Yong-Tao (田永涛), Li Xin-Jian (李新建) Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction 2014 Chin. Phys. B 23 087307

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Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction

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