Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2014, Vol. 23 Issue (8): 087304    DOI: 10.1088/1674-1056/23/8/087304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Bipolar resistance switching in the fully transparent BaSnO3-based memory device
Zhang Tinga b, Yin Jianga, Zhao Gao-Fengb, Zhang Wei-Fengb, Xia Yi-Donga, Liu Zhi-Guoa
a National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093, China;
b Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn