Valley selection rule in a Y-shaped zigzag graphene nanoribbon junction

doi:10.1088/1674-1056/23/8/087202

Abstract The valley valve effect was predicted in a straight zigzag graphene nanoribbon (ZGR) p/n junction. In this work, we address a possible valley selection rule in a Y-shaped ZGR junction. By modeling the system as a three-terminal device and calculating the conductance spectrum, we found that the valley valve effect could be preserved in the system and the Y-shaped connection does not mix the valley index or the pseudoparities of quasiparticles. It is also shown that the Y-shaped ZGR device can be used to separate spins in real space according to the unchanged valley valve effect. Our finding might pave a way to manipulate and detect spins in a multi-terminal graphene-based spin device.

Keywords: valley selection rule zigzag graphene nanoribbon pseudoparity conductance

Received: 15 November 2013
Revised: 14 February 2014
Accepted manuscript online:

PACS:	72.25.Dc	(Spin polarized transport in semiconductors)
	72.80.Vp	(Electronic transport in graphene)
	72.25.Mk	(Spin transport through interfaces)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 110704033), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2010416), and the Natural Science Foundation for Colleges and Universities in Jiangsu Province, China (Grant No. 13KJB140005).

Corresponding Authors: Zhang Lin
E-mail: lzhang2011@gmail.com

Cite this article:

Zhang Lin (张林), Wang Jun (汪军) Valley selection rule in a Y-shaped zigzag graphene nanoribbon junction 2014 Chin. Phys. B 23 087202

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[2]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197
[3]	Castro Neto A H, Guinea F, Peres N M R, Novoselov K S and Geim A K 2009 Rev. Mod. Phys. 81 109
[4]	Munoz-Rojas F, Fernandez-Rossier J and Palacios J J 2009 Phys. Rev. Lett. 102 136810
[5]	Tombros N, Jozsa C, Popinciuc M, Jonkman H T and van Wees B J 2007 Nature 448 571
[6]	Wang L and Wu M W 2013 Phys. Rev. B 87 205416
[7]	Shishir R S and Ferry D K 2009 J. Phys.: Condens. Matter 21 232204
[8]	Han W, Pi K, McCreary K M, Li Y, Wong J J I, Swartz A G and Kawakami P K 2010 Phys. Rev. Lett. 105 167202
[9]	Kechedzhi K, Hwang E H and Das Sarma S 2012 Phys. Rev. B 86 165442
[10]	Zhang Z H, Chen C F and Guo W L 2009 Phys. Rev. Lett. 103 187204
[11]	Guo Y F, Guo W L and Chen C F 2010 J. Phys. Chem. C 114 13098
[12]	Guo Y F and Guo W L 2012 J. Appl. Phys. 111 074317
[13]	Dmitry A A, Lee Patrick A and Levitov S 2006 Phys. Rev. Lett. 96 176803
[14]	Zhang Y T, Jiang H, Sun Q F and Xie X C 2010 Phys. Rev. B 81 165404
[15]	Michetti P and Recher P 2011 Phys. Rev. B 84 125438
[16]	Dell'Anna L and De Martino A 2009 Phys. Rev. B 80 155416
[17]	Ding K H, Zhu Z G and Berakdar J 2011 Phys. Rev. B 84 115433
[18]	Wang Z F, Jin S and Liu F 2013 Phys. Rev. Lett. 111 096803
[19]	Zhang L 2013 J. Phys.: Condens. Matter 25 035303
[20]	Valenzuela Sergio O 2009 Int. J. Mod. Phys. B 23 2413
[21]	Wang J, Tian H Y, Yang Y H and Chan K S 2012 Phys. Rev. B 86 081404
[22]	McCreary K M, Swartz A G, Han W, Fabian J and Kawakami R K 2012 Phys. Rev. Lett. 109 186604
[23]	Vera-Marun I J, Ranjan V and van Wees B J 2012 Nat. Phys. 8 313
[24]	Rycerz A, Tworzydlo J and Beenakker C W J 2007 Nat. Phys. 3 172
[25]	Akhmerov A R, Bardarson J H, Rycerz A and Beenakker C W J 2008 Phys. Rev. B 77 205416
[26]	Cresti A, Grosso G and Parravicini G P 2008 Phys. Rev. B 77 233402
[27]	Nakabayashi J, Yamamoto D and Kurihara S 2009 Phys. Rev. Lett. 102 066803
[28]	Xing Y X, Wang J and Sun Q F 2011 Phys. Rev. B 83 205418
[29]	Tian H Y and Wang J 2012 Chin. Phys. B 21 017203
[30]	Wang J, Zhang L and Chan K S 2011 Phys. Rev. B 83 125425
[31]	Pisani L, Chan J A, Montanari B and Harrison N M 2007 Phys. Rev. B 75 064418
[32]	Datta S 1995 Electronic Transport in Mesoscopic Systems, 2nd edn. (Cambridge: Cambridge University Press) p. 102
[33]	Maher M Kh, Shahtahmassebi N and Roknabadi M R 2013 Physica E 54 93
[34]	Li T C and Lu S P 2008 Phys. Rev. B 77 085408
[35]	Libisch F, Rotter S and Burgdörfer J 2012 New J. Phys. 14 123006

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Valley selection rule in a Y-shaped zigzag graphene nanoribbon junction

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