Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/23/7/077105

Abstract Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near room temperature while the interface roughness scattering becomes the dominant carrier scattering mechanism at low temperatures (～ 100 K). Based on measured current-voltage characteristics of prepared rectangular AlN/GaN heterostructure field-effect transistor under different temperatures, the temperature-dependent variation of electron mobility under different gate biases is investigated. The polarization Coulomb field (PCF) scattering is found to become an important carrier scattering mechanism after device processing under different temperatures. Moreover, it is found that the PCF scattering is not generated from the thermal stresses, but from the piezoelectric contribution induced by the electrical field in the thin AlN barrier layer. This is attributed to the large lattice mismatch between the extreme thinner AlN barrier layer and GaN, giving rise to a stronger converse piezoelectric effect.

Keywords: AlN/GaN electron mobility polarization Coulomb field scattering polarization

Received: 24 October 2013
Revised: 14 January 2014
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	72.20.Fr	(Low-field transport and mobility; piezoresistance)
	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	77.22.Ej	(Polarization and depolarization)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61306113 and 11174182).

Corresponding Authors: Feng Zhi-Hong
E-mail: blueledviet@yahoo.com.cn

About author: 71.55.Eq; 72.20.Fr; 72.10.-d; 77.22.Ej

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Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Guo Hong-Yu (郭红雨), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Wang Yuan-Gang (王元刚), Xu Peng (徐鹏), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军) Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 2014 Chin. Phys. B 23 077105

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Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

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