Effect of alumina thickness on Al2O3/InP interface with post deposition annealing in oxygen ambient

doi:10.1088/1674-1056/23/7/077305

Abstract In this paper, the effect of alumina thickness on Al₂O₃/InP interface with post deposition annealing (PDA) in the oxygen ambient is studied. Atomic layer deposited (ALD) Al₂O₃ films with four different thickness values (5 nm, 7 nm, 9 nm, 11 nm) are deposited on InP substrates. The capacitance-voltage (C-V) measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy (XPS) data present significant growth of indium-phosphorus oxide near the Al₂O₃/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al₂O₃ side and oxidized InP, which degrades the interface.

Keywords: Al₂O₃ oxygen annealing capacitance-voltage measurement hysteresis curve

Received: 21 October 2013
Revised: 24 December 2013
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	61.50.Ah	(Theory of crystal structure, crystal symmetry; calculations and modeling)
	61.72.Cc	(Kinetics of defect formation and annealing)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61204006), the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250002), and the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002).

Corresponding Authors: Yang Zhuo
E-mail: sdyblue@163.com

About author: 73.40.Qv; 85.30.De; 61.50.Ah; 61.72.Cc

Cite this article:

Yang Zhuo (杨卓), Yang Jing-Zhi (杨靖治), Huang Yong (黄永), Zhang Kai (张锴), Hao Yue (郝跃) Effect of alumina thickness on Al₂O₃/InP interface with post deposition annealing in oxygen ambient 2014 Chin. Phys. B 23 077305

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Effect of alumina thickness on Al2O3/InP interface with post deposition annealing in oxygen ambient

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Effect of alumina thickness on Al₂O₃/InP interface with post deposition annealing in oxygen ambient