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Chin. Phys. B, 2014, Vol. 23(7): 077201    DOI: 10.1088/1674-1056/23/7/077201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

Chen Si-Zhe (陈思哲), Sheng Kuang (盛况)
College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China
Abstract  We present the design consideration and fabrication of 4H-SiC trenched-and-implanted vertical junction field-effect transistors (TI-VJFETs). Different design factors, including channel width, channel doping, and mesa height, are considered and evaluated by numerical simulations. Based on the simulation result, normally-on and normally-off devices are fabricated. The fabricated device has a 12 μm thick drift layer with 8× 1015 cm-3 N-type doping and 2.6 μm channel length. The normally-on device shows a 1.2 kV blocking capability with a minimum on-state resistance of 2.33 mΩ · cm2, while the normally-off device shows an on-state resistance of 3.85 mΩ ·cm2. Both the on-state and the blocking performances of the device are close to the state-of-the-art values in this voltage range.
Keywords:  silicon carbide      trenched-and-implanted vertical junction field-effect transistor      normally-on device      normally-off device  
Received:  09 November 2013      Revised:  21 January 2014      Accepted manuscript online: 
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  85.30.Tv (Field effect devices)  
Fund: Projects supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050401) and the National Science Fund for Distinguished Young Scholars, China (Grant No. 51225701).
Corresponding Authors:  Sheng Kuang     E-mail:  shengk@zju.edu.cn
About author:  72.80.Ey; 85.30.Tv

Cite this article: 

Chen Si-Zhe (陈思哲), Sheng Kuang (盛况) Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors 2014 Chin. Phys. B 23 077201

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